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Magnetron Sputter Epitaxy of Group III-Nitride?Semiconductor Nanorods

機譯：III族氮化物半導體納米棒的磁控濺射外延

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The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. Moreover, the ternary alloys (InGaN, InAlN and AlGaN) present the advantage of bandgap tuning, giving access to the whole visible spectrum, from near infrared into deep ultraviolet wavelengths. The intrinsic properties of III-nitride materials can be combined with characteristical features of nanodimension and geometry in nanorod structures. Moreover, nanorods offer the advantage of avoiding problems arising from the lack of native substrates, like lattice and thermal expansion, film – substrate mismatch. The growth and characterization of group III-nitride semiconductos nanorods, namely InAlN and GaN nanorods, is presented in this thesis. All the nanostructures were grown by employing direct-current reactive magnetron sputter epitaxy. InxAl1?xN self-assembled, core-shell nanorods on Si(111) substrates were demonstrated. A comprehensive study of temperature effect upon the morphology and composition of the nanorods was realized. The radial nanorod heterostructure consists of In-rich cores surrounded by Al-rich shells with different thicknesses. The spontaneous formation of core-shell nanorods is suggested to originate from phase separation due to spinodal decomposition. As the growth temperature increase, In desorption is favored, resulting in thicker Al-rich shells and larger nanorod diameters. Both self-assembled and selective-area grown GaN nanorods are presented. Self-assembled growth of GaN nanorods on cost-effective substrates offers a cheaper alternative and simplifies device processing. Successful growth of high- quality GaN (exhibiting strong bandedge emission and high crystalline quality) on conductive templates/substrates such as Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti is supported by the possibility to be used as electrodes when integrated in optoelectronic devices. The self-assembled growth leads to mainly random nucleation, resulting in nanorods with large varieties of diameters, heights and densities within a single growth run. This translates into non-uniform properties and complicates device processing. These problems can be circumvented by employing selective-area growth. Pre-patterned substrates by nano-sphere lithography resulted in GaN nanorods with controlled length, diameter, shape, and density. Well-faceted c-axis oriented GaN nanorods were grown directly onto the native SiOx layer inside nano-opening areas, exhibiting strong bandedge emission at room- temperature and single-mode lasing. Our studies on the growth mechanism revealed a different growth behavior when compared with selective-area grown GaN nanorods by MBE and MOCVD. The time-dependent growth series helped define a comprehensive growth mechanism from the initial thin wetting layer formed inside the openings, to the well-defined, uniform, hexagonal NRs resulted from the coalescence of multiple initial nuclei.
機譯：III族氮化物半導體家族包括氮化鎵（GaN），氮化鋁（AlN），氮化銦（InN）以及相關(guān)的三元和四元合金。直接帶隙以及出色的物理和化學性能激發(fā)了對這類材料的研究興趣。此外，三元合金（InGaN，InAlN和AlGaN）具有帶隙調(diào)諧的優(yōu)勢，可以訪問從近紅外到深紫外波長的整個可見光譜。 III族氮化物材料的固有特性可以與納米棒結(jié)構(gòu)中納米尺寸和幾何形狀的特征相結(jié)合。此外，納米棒還具有避免因缺乏天然底物而引起的問題的優(yōu)勢，例如晶格和熱膨脹，膜-底物不匹配。本文介紹了III族氮化物半導體納米棒InAlN和GaN納米棒的生長和表征。所有的納米結(jié)構(gòu)都是通過采用直流反應(yīng)磁控濺射外延生長的。在Si（111）襯底上展示了InxAl1-xN自組裝核殼納米棒。對溫度對納米棒的形貌和組成的影響進行了全面的研究。徑向納米棒異質(zhì)結(jié)構(gòu)由富含In的核和不同厚度的富含Al的殼包圍。有人建議自發(fā)形成核-殼納米棒是由于旋節(jié)線分解而引起的相分離。隨著生長溫度的升高，In脫附是有利的，從而導致較厚的富Al殼和較大的納米棒直徑。提出了自組裝和選擇性區(qū)域生長的GaN納米棒。 GaN納米棒在具有成本效益的襯底上的自組裝生長提供了更便宜的替代方案，并簡化了器件處理。高質(zhì)量GaN（展現(xiàn)出強大的帶邊發(fā)射和高結(jié)晶質(zhì)量）在導電模板/基板（例如Si，SiC，TiN / Si，ZrB2 / Si，ZrB2 / SiC，Mo和Ti）上的成功生長得到了以下可能性的支持集成到光電設(shè)備中時可用作電極。自組裝的生長主要導致隨機成核，從而在一次生長過程中產(chǎn)生直徑，高度和密度各不相同的納米棒。這轉(zhuǎn)化為非均勻的特性并使設(shè)備處理復雜化。這些問題可以通過采用選擇性區(qū)域生長來解決。通過納米球體光刻技術(shù)對襯底進行預圖案化處理后，GaN納米棒的長度，直徑，形狀和密度均得到控制。面面清晰的c軸取向GaN納米棒直接生長在納米開口區(qū)域內(nèi)的天然SiOx層上，在室溫和單模激光作用下表現(xiàn)出很強的帶邊發(fā)射。我們對生長機理的研究表明，與通過MBE和MOCVD選擇性生長的GaN納米棒相比，生長行為不同。隨時間變化的生長系列幫助定義了一個全面的生長機制，從在開口內(nèi)部形成的初始薄潤濕層，到由多個初始核的聚結(jié)產(chǎn)生的輪廓分明的，均勻的六角形NR。

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    Serban, Alexandra;

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  • 年度 2017
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  • 正文語種 eng
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